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DMS3016SFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.9
D = 0.005
R θ JA (t)=r(t) * R θ JA
Single Pulse
R θ JA = 54°C/W
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
100
± 100
V
μA
nA
V GS = 0V, I D = 1mA
V DS = 30V, V GS = 0V
V GS = ±1 2V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
V GS(th)
R DS(ON)
|Y fs |
V SD
I S
1.0
?
?
?
?
?
?
10
12
25
0.37
?
2.2
13
16
?
0.6
5
m Ω
V
S
V
A
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 11.2A
V GS = 4.5V, I D = 10.A
V DS = 5V, I D = 11.2A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
?
1886
372
128
2.0
19.5
44.6
4.8
4.6
5.8
23.7
35.4
7.7
?
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
ns
V DS = 15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 15V, V GS = 10V
I D = 11.2A
V GS = 10V, V DD = 15V, R G = 3 Ω ,
R L = 1.2 Ω
Notes:
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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